PART |
Description |
Maker |
BD650 |
(BD644 - BD652) Silicon Darlington Power Transistor
|
Comset Semiconductors
|
1N5070 1N5075 1N5078 1N5100 1N5105 1N5103 1N5104 1 |
POWER ZENERS 45 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 180 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE POWER ZENERS 160 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE POWER ZENERS 36 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE POWER ZENERS 14 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE POWER ZENERS 16 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE POWER ZENERS 30 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE POWER ZENERS 18 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE POWER ZENERS 33 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE POWER ZENERS 56 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE POWER ZENERS 10 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE CAP 100PF 100V 5% NP0(C0G) RAD.20 .20X.20 TR-13 20 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Power Zeners. 3 Watt 电源齐纳基准源3瓦特 POWER ZENERS 22 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE POWER ZENERS 220 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE POWER ZENERS 320 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE FUSED-IN-GLASS METALLARGICALTY BONDED 3 WAIT ZENER DIODES
|
MICROSEMI CORP-SCOTTSDALE TE Connectivity, Ltd. Bourns, Inc. Microsemi, Corp. MICROSEMI[Microsemi Corporation] POWER ZENERS
|
BD535 BD537 BD536 BD533 4133 BD538 BD534 -BD536 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??) From old datasheet system COMPLEMENTARY SILICON POWER TRANSISTORS RI Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 15V; Power: 2W; Custom Solutions Available; 1kVDC Complemetary Silicon Power Transistors(互补硅功率晶体管)
|
STMICROELECTRONICS[STMicroelectronics] 意法半导
|
PMD11K80 PMD11K PMD11K100 PMD11K60 PMD10K80 PMD10K |
Silicon Power Darlington Transistors SILICON POWER DARLING TRANSISTORSl 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3
|
Central Semiconductor C... CENTRAL[Central Semiconductor Corp] Central Semiconductor Corp. Central Semiconductor, Corp.
|
2SB1011 |
Power Device - Power Transistors - General-Purpose power amplification Silicon PNP Transistor Silicon PNP triple diffusion planar type
|
Panasonic Corporation
|
MJE240 MJE243 MJE252 MJE254 MJE241 MJE242 MJE244 M |
Leaded Power Transistor General Purpose COMPLEMENTARY SILICON POWER TRANSISTORS 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 (MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS From old datasheet system
|
Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp] http://
|
PBY277 1N1199A 1N1200A 1N1202A 1N1204A 1N1206A 1N3 |
Silicon-Power Rectifiers Silicon-Power Rectifiers 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4 Silicon-Power Rectifiers 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-4 Replacement with:PBY272R
|
Diotec Semiconductor AG DIOTEC[Diotec Semiconductor] Diotec Elektronische
|
1N3161 1N3161R 1N3162 1N3162R 1N3163 1N3163R 1N316 |
Standard Rectifier (trr more than 500ns) SILICON POWER RECTIFIER 240 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB SILICON POWER RECTIFIER 300 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB SILICON POWER RECTIFIER 240 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AB SILICON POWER RECTIFIER 240 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
2N5655 2N5656 2N5657 |
Power 1A 350V NPN POWER TRANSISTORS NPN SILICON Plastic NPN Silicon High-Voltage Power Transistor
|
ONSEMI[ON Semiconductor]
|
NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Receptacle With A Wire Wrap Tail Silicon Power Rectifier Diode / 40 Amp Silicon Power Rectifier Diode 40 Amp NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp 40 A, 300 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
|
NEC[NEC]
|
BDX53B BD53C BDX54C ON0205 BDX53C BDX54B |
From old datasheet system 8 AMPERE POWER TRANSISTORS Plastic Medium-Power Complementary Silicon Transistors DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS
|
Motorola Inc MOTOROLA[Motorola Inc] Motorola, Inc ON Semiconductor
|
|